schottky barrier
英
美
网络 肖特基势垒; 萧特基障壁; 肖特基能障; 萧特基位障; 萧特基势垒
双语例句
- The Schottky Barrier at Grain Boundaries of Polycrystalline Ferroelectric Semiconductors
势垒注入渡越时间二极管振荡器多晶铁电半导体晶界处的肖特基势垒 - Silicon high-current Schottky barrier switching diode
硅大电流肖特基开关二极管 - The threshold voltage of SiC Schottky barrier source/ drain MOSFET
SiC肖特基源漏MOSFET的阈值电压 - Using Schottky barrier diodes for D1 and D2 rather than common diodes reduces the low-level voltage on the bus, improving the noise margin.
使用肖特基二极管D1和D2，而不是普通二极管，为的是减少总线上低状态电压，改进噪声极限。 - As an example, Schottky barrier diode characteristics is simulated using this method. Study on the Characteristics of Electric Contact between Pantograph and Overhead Contact Line
以肖特基势垒二极管为例，应用该方法，实现了高接触势垒情形下的正反向电流模拟。受电弓&接触网系统电接触特性研究 - Schottky barrier gate field effect transistor
肖脱基势结型场效应晶体管 - Life Prediction of Power Schottky Barrier Diode Based on the Method of Parameter Degeneration
基于参数退化法评价功率肖特基二极管寿命 - Enhancement type schottky barrier fet
增强型肖特基势垒场效应晶体管 - Abnormal Breakdown Diagram of the Schottky Barrier Diodes
肖特基二极管异常击穿特性曲线的研究 - Investigation on Materials Growth and Device Fabrication of Schottky Barrier Diodes
肖特基二极管相关材料生长及器件研究 - The Schottky Barrier at Grain Boundaries of Polycrystalline Ferroelectric Semiconductors Abnormal Breakdown Diagram of the Schottky Barrier Diodes
多晶铁电半导体晶界处的肖特基势垒肖特基二极管异常击穿特性曲线的研究 - Effect of Structure Parameters on the Performances of GaN Schottky Barrier Ultraviolet Photodetectors and Device Design
结构参数对GaN肖特基紫外探测器性能的影响及器件设计 - Al/ GaAs ( 100) schottky barrier contact has been grown by molecular beam epitaxy ( MBE).
利用分子束外延（MBE）设备生长了AI/GaAs（100）肖特基结。 - Physical Connotation of Average-Bond-Energy and Study of Schottky Barrier and Heterojunction Band Offset
平均键能物理内涵与肖特基势垒和异质结带阶的研究 - The electron irradiation-induced failure mechanism of n-type Au/ GaN Schottky barrier UV detectors is investigated.
研究了n型Au/GaN肖特基势垒紫外光探测器的电子辐照失效机理。 - The cutoff wavelength and the quantum efficiency of PtSi infrared detector are restricted by its Schottky barrier height.
PtSi肖特基二极管的势垒高度制约PtSi红外探测器的截止波长和量子效率。 - This paper described the design thinking and the working principle of schottky barrier diode reverse impulse energy tester.
本文叙述了肖特基二极管及反向脉冲能量测试仪的设计思想及工作原理。 - In this paper, We propose a new approach to the analysis of α& Si schottky barrier profile.
本文提出一个关于非晶硅肖特基势垒（α&Si.S.B.）剖面的新的分析方法。 - Schottky Barrier Diode ( SBD) is based on the rectification characteristics of metal-semiconductor contact.
肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。 - We have calculated the saturation current density and ideality factor of the Schottky barrier with reverse characteristics.
根据肖特基势垒的反向IV曲线，计算了势垒的反向饱和电流密度和平均理想因子。 - Its operating mechanism is the same as that of the PtSi/ Si Schottky barrier detector.
它的工作原理和PtSi/Si肖特基势垒红外摄像器一样。 - The experiment results show that the Schottky barrier properties and the surface passivation actions to silicon devices of the films are good.
实验表明该膜有良好的肖特基势垒特性和对硅器件的表面钝化作用。 - The transistor can be regarded as two back-to-back Schottky barrier diodes.
根据其结构特点，我们可以将其看作是两个背靠背的肖特基二极管。 - In this paper, the methods of improving the quantum efficiency and the transfer efficiency of PtSi Schottky barrier infrared CCD ( PtSi-SBIRCCD) are expounded.
本文阐述了提高PtSi肖特基势垒红外CCD（PtSi-SBIRCCD）的量子效率和转移效率的方法。 - The interface property of palladium silicide-silicon ( P-type) Schottky Barrier Diode ( SBD) has been studied by AES spectrum and EBIC image. The thickness of Pd_x Si_y layer and the deepness of schottky "junction" are estimated.
对硅化钯-P型硅肖特基势垒二极管（SBD）的界面性质作了AES谱和EBIC像分析，估算了PdxSiy层厚度和肖特基结的结深。 - Schottky barrier diodes with different metal on III nitride have been fabricated.
研制了三类不同金属和III族氮化物接触的肖特基势垒二极管。 - The InGaAs MSM photodetector with double Schottky barrier enhancement layers is investigated for the first time.
首次采用双重肖特基势垒增强层技术，制作了InGaAs金属－半导体－金属光电探测器。 - The enhancement of photocatalytic activity is attributed to energy band matching and Schottky barrier effect.
光催化性能的提高主要归因于异质结构的能带匹配和肖特基势垒。 - The gate metal is Al, which has Schottky barrier interface with copper phthalocyanine.
栅极金属是Al，与酞菁铜界面形成肖特基势垒。